D634 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D634 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD634
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB=B 14mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 6mA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
1.5
V
2.0
V
2.5
V
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 3V
2000
15000
hFE-2
DC Current Gain
IC= 7A ; VCE= 3V
1000
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
0.8
μs
IB1= -IB2= 6mA; RL= 15Ω;
VCC= 45V;
3.0
μs
PW= 20μs, Duty Cycle≤1%
2.5
μs
isc Website：www.iscsemi.cn
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