CY20AAJ-8H(2013) View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

CY20AAJ-8H
(Rev.:2013)

Nch IGBT for Strobe Flash 400V, 150A, 4V drive

Renesas Electronics 

CY20AAJ-8H

Preliminary

Electrical Characteristics

Parameter

Collector-emitter breakdown voltage

Collector-emitter leakage current

Gate-emitter leakage current

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Fall time

Symbol

V(BR)CES

ICES

IGES

VGE(th)

VCE(sat)

tf

Min.

450

—

—

0.5

—

—

Typ.

—

—

—

0.8

4

0.5

Max.

—

10

10

1.5

8

—

Unit

V

A

A

V

V

s

(Tch = 25°C)

Test conditions

IC = 1 mA, VGE = 0 V

VCE = 400 V, VGE = 0 V

VGE = 6 V, VCE = 0 V

VCE = 10 V, IC = 1 mA

VCE = 4 V, IC = 130 A

IC = 20 A, VCC = 300 V,

Resistive loads

VGE = 5 V, RG = 30 

Performance Curves

Maximum Pulse Collector Current

(Conductive Capability in Strobe Flasher Applications)

160

Tc = 70°C

CM = 400μF

d RG = 30Ω

120 Single pulse

en 80

mm ign 40

o es 0

0

2

4

6

8

Noftorrencew d Gate-Emitter Voltage VGE (V)

R07DS1007EJ0300 Rev.3.00

Jan 30, 2013

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