CY20AAJ-8H(2013) View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
CY20AAJ-8H Datasheet PDF : 5 Pages
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CY20AAJ-8H
Application Example
Preliminary
IXe
Vtrig
CM
+
–
VCM
Trigger Signal Vtrig
RG
VCE
30Ω
VG
IGBT
IGBT
VG
Gate Voltage
Xe Tube Current IXe
Recommended Operation Maximum Operation
Conditions
Conditions
VCM
330 V
350 V
ICP
120 A
130 A
CM
330 μF
400 μF
VGE
5V
—
nd Precautions on Usage
e 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
m n device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
m ig peak reverse gate current during turn-off must become less than 0.1 A. (In general, when RG (off) = 30 , it is
satisfied.)
s 3. The operation life should be endured 5,000 shots under the charge current (IXe 130 A : full luminescence
o e condition) of main capacitor (CM = 400 μF) which can endure repeated discharge of 5,000 times. Repetition period
c under full luminescence condition is over 3 seconds.
Noftorrenew d 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V.
R07DS1007EJ0300 Rev.3.00
Jan 30, 2013
Page 3 of 4
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