BD334 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

BD334

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

BD334

DESCRIPTION

·High DC Current Gain

·Complement to type BD333

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·PNP epitaxial base transistors in monolithic Darlington

circuit for audio output stages and general amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

VCEO

VEBO

IC

IBM

PC

TJ

Tstg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Peak

Collector Power Dissipation

@ TC=25℃

Junction Temperature

Storage Temperature Range

-80

V

-80

V

-6

V

-6

A

-0.15

A

60

W

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

2.08 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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