BD334 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

BD334

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

BD334

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC=- 3A; IB= -12mA

VBE(on) Base-Emitter On Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= -3A; VCE= -3V

VCB= -60V; IE= 0

VCB= -60V; IE= 0,TC=150℃

VEB= -5V; IC= 0

hFE-1*

DC Current Gain

IC= -0.5A; VCE= -3V

hFE-2*

DC Current Gain

IC= -3A; VCE=-3V

hFE-3*

DC Current Gain

IC= -6A; VCE= -3V

*:Measured under pulse conditions:tp<300us,σ<2%

MIN TYP. MAX UNIT

-80

V

-2.0 V

-2.5 V

-0.1

-1.0

mA

-5 mA

2700

750

400

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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