D1541 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

D1541

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Base Breakdown Voltage-

: VCBO= 1300V (Min)

·High Switching Speed

·Built-in Damper Diode

APPLICATIONS

·Designed for horizontal deflection output applications

.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector- Base Voltage

1300

V

VCES

Collector-Emitter Voltage

1300

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Peak

10

A

IBM

Base Current-Peak

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

3.5

A

50

W

130

℃

Tstg

Storage Temperature Range

-55~130

℃

SPTECH website：www.superic-tech.com

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