MPSW51 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Part Name

Description

Manufacturer

MPSW51

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

MPSW51 TRANSISTOR (PNP)

TO – 92

FEATURES

z General Purpose Amplifier Transistor

z Low Breakdown Voltage

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-40

-30

-5

-1

625

200

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

1.EMITTER

2.BASE

3.COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE

fT

Cob

Test conditions

IC= -0.1mA,IE=0

IC=-1mA,IB=0

IE=-0.1mA,IC=0

VCB=-30V,IE=0

VEB=-3V,IC=0

VCE=-1V, IC=-0.01A

VCE=-1V, IC=-0.1A

VCE=-1V, IC=-1A

IC=-1A,IB=-0.1A

IC=-1A, VCE=-1V

VCE=-10V,IC=-50mA,f=20MHz

VCB=-10V,IE=0, f=1MHz

Min Typ Max Unit

-40

V

-30

V

-5

V

-0.1

μA

-0.1

μA

55

60

50

-0.7

V

-1.2

V

50

MHz

30

pF

www.cj-elec.com

1

C,Dec,2015

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