2SB1421 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB1421 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SB1421
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A
Vee(on) Base -Emitter On Voltage
lc= -5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; lc= 0
hpE-1
DC Current Gain
lc= -20rnA; VCE= -5V
hFE-2
DC Current Gain
lc= -1A; VCE= -5V
hpE-3
DC Current Gain
lc= -5A; VCE= -5V
fr
Current-Gain—Bandwidth Product lc= -0.5A; VCE= -5 V; f= 1MHz
MIN TYP. MAX UNIT
-2.0 V
-1.8 V
-50 U A
-50 M A
20
1
60
200
20
15
MHz
hFE.2Classifications
Q
S
P
60-120 80-160 100-200
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