2N5298 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2N5298 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) =60V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0.15A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for medium power switching amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VCEV
VCER
VEBO
Collector-Emitter Voltage
Collector-Emitter Voltage
RBE= 100Ω
Emitter-Base Voltage
80
V
70
V
5
V
IC
Collector Current-Continuous
4.0
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2.0
A
36
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
3.47 ℃/W
SPTECH website：www.superic-tech.com
2N5298
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