2N7002K View Datasheet(PDF) - Tiger Electronic
Part Name
Description
Manufacturer
2N7002K Datasheet PDF : 5 Pages
| |||
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage*
Zero Gate Voltage Drain Current
Gate –Source leakage current
Symbol
Test Condition
VDS
VGS(th)
IDSS
IGSS1
IGSS2
VGS = 0V, ID =250µA
VDS =VGS, ID =1mA
VDS =48V,VGS = 0V
VGS =±20V, VDS = 0V
VGS =±10V, VDS = 0V
IGSS3
VGS =±5V, VDS = 0V
Drain-Source On-Resistance*
Diode Forward Voltage
RDS(on)
VSD
VGS = 4.5V, ID =200mA
VGS =10V,ID =500mA
VGS=0V, IS=300mA
Recovered charge
Qr
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µS
Dynamic Characteristics**
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics**
Turn-On Delay Time
Turn-Off Delay Time
Reverse recovery Time
GATE-SOURCE ZENER DIODE
Ciss
Coss
Crss
VDS =10V,VGS =0V,f =1MHz
td(on)
td(off)
trr
VGS=10V,VDD=50V,RG=50Ω,
RGS=50Ω, RL=250Ω
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µS
Gate-Source Breakdown Voltage BVGSO Igs=±1mA (Open Drain)
Notes :
*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.
**These parameters have no way to verify.
Min Typ Max Units
60
V
1
1.3 2.5
V
1
µA
±10 µA
±200 nA
±100 nA
1.1
5.3
Ω
0.9
5
Ω
1.5
V
30
nC
40 pF
30
pF
10
pF
10
ns
15
ns
30
ns
±21.5
±30
V
2
G,Aug,2016
Share Link: 