TIP3055 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

TIP3055

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

TIP3055

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain-

: hFE=20-70@IC = 4A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.1 V(Max)@ IC = 4A

·Complement to Type TIP2955

APPLICATIONS

·Designed for general-purpose switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

100

V

VCEO Collector-Emitter Voltage

60

V

VEBO

Emitter-base Voltage

7

V

IC

Collector Current-Continuous

15

A

IB

Base Current

7

A

PC

Collector Power Dissipation@TC=25℃

90

W

Tj

Junction Tmperature

150

℃

Tstg

Storage Temperature Range

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE UNIT

Rth j-c Thermal Resistance,Junction to Case

1.39 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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