TIP3055 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

TIP3055

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistors

INCHANGE Semiconductor

TIP3055

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.4A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.3A

VBE(on) Base-Emitter On Voltage

IC= 4A ; VCE= 4V

ICEO

Collector Cutoff Current

VCE= 30V; IB=0

ICBO

Collector Cutoff Current

VCB= 100V; IE=0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE-1

DC Current Gain

IC= 4A ; VCE= 4V

hFE-2

Is/b

fT

DC Current Gain

IC= 10A ; VCE= 4V

Second Breakdown Collector Current

with Base Forward Biased

VCE= 30V,t= 1.0s,Nonrepetitive

Current-Gain—Bandwidth Product

IC= 0.5A ; VCE= 10V;ftest= 1.0MHz

MIN MAX UNIT

60

V

1.1

V

3.0

V

1.8

V

0.7

mA

1.0

mA

5.0

mA

20

70

5

3.0

A

2.5

MHz

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademark

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