2SC3352 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
Manufacturer
2SC3352 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 500V(Min.)
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 1A
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
0.5
A
2
W
25
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
SPTECH website：www.superic-tech.com
2SC3352
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1
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