D2053 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

Manufacturer

D2053

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A

VBE(on) Base -Emitter On Voltage

IC= 7A; VCE= 5V

ICBO

Collector Cutoff Current

VCB= 150V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 3V; IC= 0

hFE-1

DC Current Gain

IC= 20mA; VCE= 5V

hFE-2

DC Current Gain

IC= 1A; VCE= 5V

hFE-3

DC Current Gain

IC= 7A; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5 V; f= 1MHz

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

 hFE-2Classifications

Q

S

P

60-120 80-160 100-200

2SD2053

MIN TYP. MAX UNIT

2.0

V

1.8

V

50 μA

50 μA

20

60

200

20

20

MHz

150

pF

SPTECH website：www.superic-tech.com

2

Share Link: