VS-19TQ015-M3 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
VS-19TQ015-M3 Datasheet PDF : 7 Pages
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www.vishay.com
VS-19TQ015-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
CT
LS
dV/dt
TEST CONDITIONS
19 A
38 A
TJ = 25 °C
19 A
38 A
TJ = 75 °C
TJ = 100 °C, VR = 12 V
TJ = 100 °C, VR = 5 V
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.36
0.46
0.32
0.43
465
285
10.5
522
2000
8.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
TJ
TStg
RthJC
RthCS
DC operation
See fig. 4
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style 2L TO-220AC
VALUES
-55 to 125
-55 to 150
UNITS
°C
1.50
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
19TQ015
Revision: 11-Oct-17
2
Document Number: 94151
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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