CY14B108N(2011) View Datasheet(PDF) - Cypress Semiconductor

Part Name

Description

Manufacturer

CY14B108N
(Rev.:2011)

8-Mbit (1024 K × 8/512 K × 16) nvSRAM

Cypress Semiconductor 

CY14B108L

CY14B108N

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage temperature ................................ –65 C to +150 C

Maximum accumulated storage time

At 150 C ambient temperature ...................... 1000 h

At 85 C ambient temperature ..................... 20 Years

Ambient temperature with

power applied .......................................... –55 C to +150 C

Supply voltage on VCC relative to VSS ...........–0.5 V to 4.1 V

Voltage applied to outputs

in High Z state .................................... –0.5 V to VCC + 0.5 V

Input voltage ........................................–0.5 V to Vcc + 0.5 V

Transient voltage (< 20 ns) on

any pin to ground potential ................. –2.0 V to VCC + 2.0 V

Package power dissipation

capability (TA = 25 °C) ................................................. 1.0 W

Surface mount Pb soldering

temperature (3 Seconds) ......................................... +260 C

DC output current (1 output at a time, 1s duration) .... 15 mA

Static discharge voltage

(per MIL-STD-883, Method 3015) .......................... > 2001 V

Latch up current .................................................... > 200 mA

Operating Range

Range

Industrial

Ambient Temperature

–40 C to +85 C

VCC

2.7 V to 3.6 V

DC Electrical Characteristics

Over the Operating Range (VCC = 2.7 V to 3.6 V)

Parameter

Description

Test Conditions

VCC

Power supply

ICC1

Average VCC current

tRC = 20 ns

tRC = 25 ns

tRC = 45 ns

Values obtained without output loads

(IOUT = 0 mA)

ICC2

Average VCC current during

All inputs don’t care, VCC = Max

STORE

Average current for duration tSTORE

ICC3

Average VCC current at

All inputs cycling at CMOS levels.

tRC= 200 ns, VCC(Typ), 25 °C

Values obtained without output loads

(IOUT = 0 mA).

ICC4

Average VCAP current during All inputs don’t care. Average current

AutoStore cycle

for duration tSTORE

ISB

VCC standby current

CE > (VCC – 0.2 V).

VIN < 0.2 V or > (VCC – 0.2 V).

Standby current level after

nonvolatile cycle is complete.

Inputs are static. f = 0 MHz.

IIX[9]

Input leakage current (except

HSB)

VCC = Max, VSS < VIN < VCC

IOZ

VIH

VIL

VOH

VOL

VCAP[10]

Input leakage current (for HSB)

Off-state output leakage current

Input HIGH voltage

Input LOW voltage

Output HIGH voltage

Output LOW voltage

Storage capacitor

VCC = Max, VSS < VIN < VCC

VCC = Max, VSS < VOUT < VCC,

CE or OE > VIH or

BHE/BLE > VIH or WE < VIL

IOUT = –2 mA

IOUT = 4 mA

Between VCAP pin and VSS, 5 V rated

Min

2.7

–

–

–

–

–

–2

–200

–2

2.0

Vss – 0.5

2.4

–

122

Typ [8]

3.0

–

–

40

–

–

Max Unit

3.6

V

75

mA

75

mA

57

mA

20

mA

–

mA

10

mA

10

mA

–

+2

A

–

+2

A

–

+2

A

–

VCC + 0.5 V

–

0.8

V

–

–

V

–

0.4

V

150

360

F

Notes

8. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested.

9.

The HSB pin

parameter is

chhaasrIaOcUteTr=ize–d2

µA

but

fnoor tVtOesHteodf .2.4

V

when

both

active

HIGH

and

LOW

drivers

are

disabled.

When

they

are

enabled

standard

VOH

and

VOL

are

valid.

This

10.

MoitniisnVaVClCwAPAaPyissvcarheluacerogmgeudmateroannadtemedeinstoimthuuasmtethvaeocrlteaapgisaecaditsuourrifnwfigcitihaeinnPtotchwheeasrr-gpUeepcaiRfvieaEdiClamAbLlienLtaconycdcolmemsapoxletlhtimeaitatsas.nuRicmecfmeesresadfupialptAelicupatootiwSonteornr-edootoewpAnerNcay4tic3ol5en9.c3ManfaoxcroVmmCopArlePetvdeaealtuaseilusgcoucnaersVasnCfutAelPeAosupttohtiSoanttosthr.ee.

capacitor

Therefore

Document #: 001-45523 Rev. *J

Page 9 of 25

[+] Feedback

Share Link: