BTS726L1 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BTS726L1 Datasheet PDF : 15 Pages
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BTS 726 L1
Input circuit (ESD protection), IN1 or IN2
IN
RI
Overvoltage protection of logic part
GND1 or GND2
+ Vbb
ESD-ZD I
II
GND
IN R I
V Z2
Logic
ESD zener diodes are not to be used as voltage clamp at
DC conditions. Operation in this mode may result in a drift of
the zener voltage (increase of up to 1 V).
Status output, ST1 or ST2
RST ST
V Z1
R GND
PROFET
GND
R ST(ON)
+5V
ST
Signal GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.,
RGND = 150 Ω, RST = 15 kΩ nominal.
GND
ESD-
ZD
Reverse battery protection
+ 5V
- Vbb
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 Ω
at 1.6 mA, ESD zener diodes are not to be used as voltage
clamp at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
RST
RI
IN
ST
Logic
Power
Inverse
Diode
OUT
Inductive and overvoltage output clamp,
OUT1 or OUT2
+Vbb
VZ
V ON
OUT
GND
RGND
RL
Signal GND
RGND = 150 Ω, RI = 3.5 kΩ typ,
Power GND
Temperature protection is not active during inverse current
operation.
PROFET
Power GND
VON clamped to VON(CL) = 47 V typ.
Semiconductor Group
8
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