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MURS320CG View Datasheet(PDF) - Unspecified

Part Name
Description
Manufacturer
MURS320CG
ETC
Unspecified ETC
MURS320CG Datasheet PDF : 3 Pages
1 2 3
Chip Silicon Rectifier
MURS305CG THRU MURS360CG
3.0A Surface Mount Super
Fast Rectifiers - 50-600V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
High current capability.
Superfast recovery time for switching mode application.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Package outline
DO-214AB(SMC)
1
2
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, JEDEC DO-214AB / SMC
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight :Approximated 0.25 gram
1.Cathode 2. Anode
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 50OC
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN.
IO
IFSM
TYP.
MAX. UNIT
3.0
A
90
A
5.0
IR
μA
100
RθJA
CJ
40
OC/W
40
pF
TSTG
-55
+150 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
MURS305CG 50
MURS310CG 100
MURS315CG 150
MURS320CG 200
MURS330CG 300
MURS340CG 400
MURS350CG 500
MURS360CG 600
35
50
70
100
105
150
140
200
210
300
280
400
350
500
420
600
1.00
35
1.25
1.68
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=3.0A
*5 Maximum Reverse recovery time, note 1
@ 2018 Copyright By American First Semiconductor
REV:1.0 Page 1/3

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