MTSF2P03HD View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MTSF2P03HD

Power MOSFET 2 Amps, 30 Volts P−Channel Micro8

ON Semiconductor 

100

VGS = 30 V

SINGLE PULSE

TC = 25°C

10

dc

1

10 ms 1 ms

MTSF2P03HD

800

600

400

VDD = 30 V

VGS = 10 V

IL = 3 A

L = 159 mH

0.1

0.01

0.1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 14. Maximum Rated Forward Biased

Safe Operating Area

200

0

25

50

75

100

125

150

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 15. Maximum Avalanche Energy versus

Starting Junction Temperature

TYPICAL ELECTRICAL CHARACTERISTICS

1000

D = 0.5

100

0.2

0.1

10

0.05

0.02

0.01

1.0

0.1

1.0E−05

SINGLE PULSE

1.0E−04

1.0E−03

1.0E−02

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

1.0E−01

t, TIME (s)

1.0E+00

1.0E+01

1.0E+02

1.0E+03

Figure 16. Thermal Response

IS

tp

di/dt

trr

ta

tb

0.25 IS

IS

TIME

Figure 17. Diode Reverse Recovery Waveform

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