MURS360B View Datasheet(PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd
Part Name
Description
Manufacturer
MURS360B Datasheet PDF : 5 Pages
| |||
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1491, Rev. -
MURS360B
Green Products
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TA = 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage (per element)
@IF = 3.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance Junction to Ambient
(Note 2)
Max. Junction Temperature
Storage Temperature Range
Approximate Weight
Case Style
Symbol
VRRM
VRWM
VR
VR(RMS)
Io
IFSM
VFM
IRM
Trr
RθJA
TJ
TSTG
wt
MURS360B
600
420
3.0
150
1.25
10
500
50
25
-55 to +150
-55 to +150
0.68
SMB
Note: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Mount on Cu-Pad Size 16mm×16mm on P.C.B.
Unit
V
V
A
A
V
µA
ns
K/W
°C
°C
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
Share Link: 