MURS360HE3/57T(2007) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
MURS360HE3/57T Datasheet PDF : 4 Pages
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New Product
MURS340 & MURS360
Vishay General Semiconductor
100
1000
10
TJ = 125 °C
TJ = 150 °C
1
TJ = 100 °C
TJ = 25 °C
0.1
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
1000
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
120
trr
Qrr
100
1 A, 50 A/µs, 30 V
80
60
40
20
0
25
50
75
100
125
Junction Temperature (°C)
Figure 6. Typical Reverse Switching Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
MIN.
Mounting Pad Layout
0.185 (4.69)
MAX.
0.103 (2.62)
0.079 (2.06)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.320 REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 88816 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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