RJK5026DPP(2008) View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK5026DPP
(Rev.:2008)

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK5026DPP

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

• Low leakage current

• High speed switching

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

G

1

23

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

VDSS

Gate to source voltage

Drain current

Drain peak current

VGSS

IDNote4

ID

Note1

(pulse)

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Avalanche energy

Channel dissipation

IDR

IDR

Note1

(pulse)

IAPNote3

EARNote3

Pch Note2

Channel to case thermal impedance

θch-c

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. STch = 25°C, Tch ≤ 150°C

4. Limited by maximum safe operation area

REJ03G1734-0100

Rev.1.00

Sep 11, 2008

D

1. Gate

2. Drain

3. Source

S

Ratings

500

±30

6

18

6

18

4

0.88

28.5

4.38

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

A

mJ

W

°C/W

°C

°C

REJ03G1734-0100 Rev.1.00 Sep 11, 2008

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