MW7IC2040NR1 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

MW7IC2040NR1

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

Zo = 50 Ω

Zin

f = 1880 MHz

f = 2040 MHz

Zo = 10 Ω

f = 2040 MHz

Zload

f = 1880 MHz

VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 W Avg.

f

Zin

MHz

W

Zload

W

1880

42.97 - j25.07

6.10 - j5.01

1900

44.01 - j25.91

5.92 - j4.71

1920

45.14 - j26.72

5.76 - j4.44

1940

46.38 - j27.48

5.62 - j4.21

1960

47.71 - j28.19

5.51 - j4.01

1980

49.16 - j28.83

5.40 - j3.83

2000

50.71 - j29.40

5.27 - j3.71

2020

52.36 - j29.87

5.13 - j3.60

2040

54.12 - j30.23

4.99 - j3.52

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Device

Under Test

Output

Matching

Network

Z in

Z load

Figure 15. Series Equivalent Input and Load Impedance

MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

10

RF Device Data

Freescale Semiconductor

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