MPXA4100(2006) View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

MPXA4100
(Rev.:2006)

Integrated Silicon Pressure Sensor Manifold Absolute Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

Freescale Semiconductor 

Fluoro Silicone

Gel Die Coat

Wire Bond

Die

P1

Stainless Steel

Metal Cover

Epoxy Plastic

Case

Lead Frame

Absolute Element

Die

Sealed Vacuum Reference

P2

Bond

Figure 2. Cross-Sectional Diagram (Not to Scale)

1.0 µF

0.01 µF

+5.0 V

1

3

IPS

2

OUTPUT

Figure 3. Recommended Power Supply Decoupling

(For output filtering recommendations, refer to Application Note AN1646.)

Figure 2 illustrates an absolute sensing chip in the basic

chip carrier (Case 867). A fluorosilicone gel isolates the die

surface and wire bonds from the environment, while allowing

the pressure signal to be transmitted to the sensor

diaphragm. The MPX4100A series pressure sensor

operating characteristics, and internal reliability and

qualification tests are based on use of dry air as the pressure

media. Media, other than dry air, may have adverse effects on

sensor performance and long-term reliability. Contact the

factory for information regarding media compatibility in your

application.

Figure 4 shows the sensor output signal relative to

pressure input. Typical, minimum, and maximum output

curves are shown for operation over a temperature range of

0° to 85°C. (The output will saturate outside of the specified

pressure range.)

MPX4100

4

5.0

4.5

Transfer Function:

VOUT = Vs* (.01059*P-.152) ± Error

4.0 VS = 5.1 Vdc

3.5 TEMP = 0 to 85°C

20 kPa TO 105 kPa

3.0 MPX4100A

MAX

TYP

2.5

2.0

1.5

MIN

1.0

0.5

0

Pressure (ref. to sealed vacuum) in kPa

Figure 4. Output versus Absolute Pressure

Sensors

Freescale Semiconductor

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