PMPB20EN View Datasheet(PDF) - Nexperia B.V. All rights reserved
Part Name
Description
Manufacturer
PMPB20EN Datasheet PDF : 15 Pages
| |||
Nexperia
PMPB20EN
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGSth
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
RG
gate resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VDS = VGS; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 7 A; Tj = 25 °C
VGS = 10 V; ID = 7 A; Tj = 150 °C
VGS = 4.5 V; ID = 7 A; Tj = 25 °C
VDS = 10 V; ID = 7 A; Tj = 25 °C
f = 1 MHz
VDS = 15 V; ID = 5 A; VGS = 10 V;
Tj = 25 °C
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 15 V; ID = 5 A; VGS = 4.5 V;
RG(ext) = 1.7 Ω; Tj = 25 °C
IS = 2.2 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
30
-
-
V
1
1.5 2
V
-
-
1
µA
-
-
20
µA
-
-
100 nA
-
-
-100 nA
-
16.5 19.5 mΩ
-
27
32
mΩ
-
20.5 24.5 mΩ
-
40
-
S
-
1.7 -
Ω
-
7.2 10.8 nC
-
1
-
nC
-
0.67 -
nC
-
435 -
pF
-
90
-
pF
-
35
-
pF
-
9
-
ns
-
17
-
ns
-
9
-
ns
-
8
-
ns
-
0.8 1.2 V
PMPB20EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 July 2018
© Nexperia B.V. 2018. All rights reserved
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