PMT29EN View Datasheet(PDF) - VBsemi Electronics Co.,Ltd

Part Name

Description

Manufacturer

PMT29EN

N-Channel 30 V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

PMT29EN

N-Channel 30 V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) () at VGS = 10 V

RDS(on) () at VGS = 4.5 V

ID (A)

Configuration

30

0.019

0.021

7

Single

FEATURES

• TrenchFET® Power MOSFET

• AEC-Q101 Qualifiedc

• 100 % Rg and UIS Tested

SOT-223

D

S

D

G

D

G

S

N-Channel MOSFET

www.VBsemi.tw

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current

TC = 25 °C

TC = 125 °C

ID

Continuous Source Current (Diode Conduction)

IS

Pulsed Drain Currenta

IDM

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

IAS

L = 0.1 mH

EAS

Maximum Power Dissipationa

TC = 25 °C

TC = 125 °C

PD

Operating Junction and Storage Temperature Range

TJ, Tstg

LIMIT

30

± 20

7

4.5

5

31

10

5

4

1.3

- 55 to + 175

THERMAL RESISTANCE RATINGS

PARAMETER

Junction-to-Ambient

Junction-to-Foot (Drain)

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

PCB Mountb

SYMBOL

RthJA

RthJF

LIMIT

110

38

UNIT

V

A

mJ

W

°C

UNIT

°C/W

E-mail：China@VBsemi TEL:86-755-83251052

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