TSM1N80CWRPG View Datasheet(PDF) - TSC Corporation

Part Name

Description

Manufacturer

TSM1N80CWRPG

N-Channel Power MOSFET

TSC Corporation 

TSM1N80

Taiwan Semiconductor

N-Channel Power MOSFET

800V, 0.3A, 21.6Ω

FEATURES

● Advanced planar process

● 100% avalanche tested

● Fast switching

APPLICATION

● Power Supply

● Lighting

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

VDS

800

V

RDS(on) (max)

21.6

Ω

Qg

5

nC

SOT-223

Notes: Moisture sensitivity level: level 3. Per J-STD-020

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 1)

Single Pulse Avalanche Energy (Note 2)

Avalanche Current, Repetitive or Not-Repetitive (Note 1)

Total Power Dissipation @ TC = 25°C

Operating Junction Temperature

Operating Junction and Storage Temperature Range

VDS

VGS

ID

IDM

EAS

IAR

PDTOT

TJ

TJ, TSTG

800

±30

0.3

1

90

1

2.1

150

- 55 to +150

UNIT

V

V

A

A

mJ

A

W

°C

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Ambient Thermal Resistance

RӨJA

60

°C/W

Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined

at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board

design. RӨJA shown below for single device operation on FR-4 PCB in still air

Document Number: DS_P0000037

1

Version: B15

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