Q62702-F1396 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
Q62702-F1396 Datasheet PDF : 7 Pages
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NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 1mA to 20mA
• fT = 8GHz
F = 1.2dB at 900MHz
BFP 182
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 182 RGs
Q62702-F1396
1=C 2=E 3=B 4=E
Package
SOT-143
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 69 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
35
4
250
150
- 65 ... + 150
- 65 ... + 150
≤ 325
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-12-1996
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