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Part Name
Description
BFP182W(2001) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BFP182W
(Rev.:2001)
NPN Silicon RF Transistor
Infineon Technologies
BFP182W Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
BFP182W
Collector-base capacitance
C
cb
=
f
(
V
CB
)
f
= 1MHz
0.5
pF
0.3
0.2
0.1
0.0
0
4
8
12
16
V
24
V
CB
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= Parameter
10
GHz
8
7
6
5
4
3
2
1
0
0
5
10
10V
8V
5V
3V
2V
1V
0.7V
15
mA
25
I
C
Power Gain
G
ma
,
G
ms
=
f
(
I
C
)
f
= 0.9GHz
V
CE
= Parameter
24
dB
10V
3V
20
2V
18
16
14
1V
12
0.7V
10
8
0
5
10
15
mA
25
I
C
Power Gain
G
ma
,
G
ms
=
f
(
I
C
)
f
= 1.8GHz
V
CE
= Parameter
18
dB
10V
5V
14
3V
2V
12
10
8
1V
6
0.7V
4
0
5
10
15
mA
25
I
C
6
Aug-09-2001
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