BFR106 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BFR106

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

Low Noise Silicon Bipolar RF Transistor

• High linearity low noise RF transistor

• 22 dBm OP1dB and 31 dBm OIP3

@ 900 MHz, 8 V, 70 mA

• For UHF / VHF applications

• Driver for multistage amplifiers

• For linear broadband and antenna amplifiers

• Collector design supports 5 V supply voltage

• Pb-free (RoHS compliant) package

• Qualification report according to AEC-Q101 available

BFR106

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR106

Marking

Pin Configuration

R7s

1=B

2=E

3=C

Package

SOT23

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Collector-emitter voltage,

TA = 25°C

TA = -55°C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation1)

TS ≤ 76 °C

Junction temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

TJ

TStg

16

15

20

20

3

210

21

700

150

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Junction - soldering point2)

RthJS

105

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

V

mA

mW

°C

Unit

K/W

1

2013-11-21

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