BF996S View Datasheet(PDF) - Temic Semiconductors

Part Name

Description

Manufacturer

BF996S

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Temic Semiconductors 

BF996S

N-Channel Dual Gate MOS-Fieldeffect Tetrode,

Depletion Mode

Applications

Input and mixer stages in UHF tuner.

Features

D Integrated gate protection diodes

D Low noise figure

D Low feedback capacitance

2

1

Electrostatic sensitive device.

Observe precautions for handling.

D High cross modulation performance

D Low input capacitance

D High AGC-range

3

4

94 9279

BF996S Marking: MH

Plastic case (SOT 143)

1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1

Absolute Maximum Ratings

Parameters

Drain source voltage

Drain current

Gate 1/gate 2-source peak current

Total power dissipation

Channel temperature

Tamb ≤ 60°C

Storage temperature range

Maximum Thermal Resistance

Parameters

Channel ambient on glass fibre printed board

(25 x 20 x 1.5) mm3 plated with 35 mm Cu

TELEFUNKEN Semiconductors

Rev. A1, 17-Apr-96

Symbol

Value

Unit

VDS

20

V

ID

30

mA

±IG1/G2SM

10

mA

Ptot

200

mW

TCh

150

°C

Tstg

–65 to +150

°C

Symbol

RthChA

Value

450

Unit

K/W

1 (5)

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