DL-3147-021 View Datasheet(PDF) - SANYO -> Panasonic
Part Name
Description
Manufacturer
DL-3147-021 Datasheet PDF : 3 Pages
| |||
Ordering number : EN5861A
DL-3147-021
Red Laser Diode
DL-3147-021
Index Guided AlGaInP Laser Diode
Overview
DL-3147-021 is index guided 645 nm (Typ.) AlGaInP laser diode with low
threshold current. The low threshold current is achieved by a strained
multiple quantum well active layer. DL-3147-021 is suitable for laser
pointer.
Package Dimensions
0
ø5.6 – 0.025
ø4.4
Tolerance : ±0.2
Unit
: mm
ø3.55±0.1
ø1.6
Effective window diameter 1.0min.
Features
• Short wavelength
• Low threshold current
• Low operating voltage
• Small package
: 645 nm (Typ.)
: Ith = 30 mA (Typ.)
: Vop = 2.3 V (Typ.)
: 5.6 mm ø
Absolute Maximum Ratings at Tc=25°C
Parameter
Symbol Ratings
Unit
Light Output
Po
5
mW
Reverse Voltage Laser VR
2
V
PIN
30
Operating Temperature Topr ---10 to +40
°C
Storage Temperature
Tstg
---40 to +85
°C
1
3
Top view
2
1.0±0.1
LD facet
ø1.4max.
3–ø0.45±0.1
Pin No. 1 2 3 ø2.0
5.6mm ø stem
Electrical Connection
1
3
LD
PD
Electrical and Optical Characteristics at Tc=25°C
2
– power supply system
Parameter
Threshold Current
Operating Current
Operating Voltage
Lasing Wavelength
Beam i) Perpendicular
Divergence Parallel
Off Axis
Perpendicular
Angle
Parallel
Differential Efficiency
Monitoring Output Current
Astigmatism
Symbol
Ith
Iop
Vop
λp
θ⊥
θ //
∆θ ⊥
∆θ //
dPo/dIop
Im
As
Condition Min. Typ. Max. Unit
CW
--
30
50
mA
Po=5mW
--
45
60
mA
Po=5mW
--
2.3
2.6
V
Po=5mW
--
645
660
nm
Po=5mW
25
30
40
deg.
Po=5mW
6
7.5
10
deg.
--
--
--
±3
deg.
--
--
--
±3
deg.
--
0.2
0.4
0.8 mW/mA
Po=5mW
0.15
0.4
0.75
mA
Po=5mW
--
8
--
µm
i) Full angle at half maximum note : The above product specifications are subject to change without notice.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2798 GI / N2897 GI, (IM) No.5861 1/3
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