MPSW14 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MPSW14 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
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by MPSW13/D
MPSW13
MPSW14
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
30
Vdc
30
Vdc
10
Vdc
1.0
Adc
1.0
Watts
8.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
2.5
Watts
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
Symbol
V(BR)CES
ICBO
IEBO
1
23
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Min
Max
Unit
30
—
Vdc
—
100
nAdc
—
100
nAdc
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
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