MPSW14 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MPSW14 Datasheet PDF : 3 Pages
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MPSW13 MPSW14
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
MPSW13
MPSW14
hFE
5,000
—
10,000
—
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
Base−Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product(2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| • ftest.
MPSW13
MPSW14
10,000
—
20,000
—
VCE(sat)
—
1.5
VBE(on)
—
2.0
fT
125
—
Unit
—
Vdc
Vdc
MHz
CURRENT LIMIT
3.0 k
THERMAL LIMIT
DUTY CYCLE ≤ 10%
SECOND BREAKDOWN LIMIT
2.0 k
100 ms
1.0 ms
1.0 k
1.0 s
500
TA = 25°C
TC = 25°C
200
1.5 2.0
5.0
10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region — Safe Operating Area
200 k
100 k
70 k
50 k
TJ = 125°C
25°C
30 k
20 k
10 k
7.0 k
5.0 k
-55°C
3.0 k
2.0 k
5.0 7.0 10
VCE = 5.0 V
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
3.0
TJ = 25°C
2.5
IC = IC =
10 mA 50 mA
IC =
IC =
250 mA 500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
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