MPSA29 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
Part Name
Description
Manufacturer
MPSA29 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
MPSA29 TRANSISTOR (NPN)
FEATURES
z Darlington Transistor
TO – 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCES
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
StorageTemperature
Value
100
100
12
0.5
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CES
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Collector cut-off current
ICES
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IEBO
hFE(1) *
hFE(2) *
VCE(sat)(1) *
VCE(sat)(2) *
VBE *
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test conditions
IC= 0.1mA,IE=0
IC=0.1mA,VBE=0
IE=10µA,IC=0
VCB=80V,IE=0
VCE=80V,IE=0
VEB=10V,IC=0
VCE=5V, IC=10mA
VCE=5V, IC=100mA
IC=10mA,IB=0.01mA
IC=100mA,IB=0.1mA
VCE=5V,IC=100mA
VCE=5V,IC=10mA,f=100MHz
VCB=10V,IE=0, f=1MHz
Min
Typ
100
100
12
10000
10000
125
Max
Unit
V
V
V
0.1
μA
0.5
μA
0.1
μA
1.2
V
1.5
V
2.0
V
MHz
8
pF
www.cj-elec.com
1
D,Aug,2016
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