MMDFS2P102 View Datasheet(PDF) - ON Semiconductor
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MMDFS2P102 Datasheet PDF : 11 Pages
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MMDFS2P102
TYPICAL FET ELECTRICAL CHARACTERISTICS
1.0 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
0.0001
1.0E−05 1.0E−04
NORMALIZED TO RqJA AT STEADY STATE (1″ PAD)
0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W
CHIP
JUNCTION 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
AMBIENT
1.0E−03
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
Figure 13. FET Thermal Response
1.0E+01
1.0E+02
1.0E+03
IS
tp
di/dt
trr
ta
tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
10
TJ = 125°C
1.0
85°C
25°C
−40 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 15. Typical Forward Voltage
10
TJ = 125°C
1.0
85°C
25°C
0.1
0
0.2
0.4 0.6 0.8
1.0
1.2
1.4
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 16. Maximum Forward Voltage
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