WILLAS
10.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V
1.0A SURFACE MOUNT SCHOTTKY BAITRORI-E2R20RAECPTAIFCIEKRASG-2E0V- 200V
SOD-123+ PACKAGE
SP1F0M41020-M+
THRUTHRU
SP1F0M2102000-M+
Pb Free Product
FIG. 1-TFYePIaCAtuL FrOeRsWARD CURRENT DERATING CURVE
• Batch process design, excellent power dissipation offers
10 better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
8• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
6• Guardring for overvoltage protection.
• Ultra high-spSeP1e0d40s~wSPi1t0c1h0i0ng.
4• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free paSPr1ts01m50e~SePt1e02n0v0ironmental standards of
MIL-STD-19500 /228
2• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0• E0 pox2y0: UL4904-V600rate8d0 flam10e0 re1t2a0rda1n4t0 160 180 200
• Case : Molded plastic, SOD-123H
AMBIENT TEMPERATURE(℃)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
FIG. 3-•MPAoXlIaMriUtyM: NInOdNic-aRtEePdEbTyITcIaVtEhoFdOeRbWanAdRD SURGE CURRENT
15•0Mounting Position : Any
Package outline
FIG. 2-TYPICAL FORWARD CHARACTERISTICS
100.00
10.00
SOD-123H
TJ=25℃ PULSE
WIDTH 300us 2%
DUTY CY0C.1L4E6(3.7)
0.130(3.3)
0.012(0.3) Typ.
1.00
0.10
0.01
0.2
0.031(0.8) Typ.
0.071(1.8)
0.056(1.4)
SP1040
SP1060
SP10100
SP10150
SP10200
0.040(1.0)
0.4
0.6
0.024(0.60) .8
1.0
FORWARD VOLTAGE0(.V03)1(0.8) Typ.
FIG. 4-TYPICDAimL eRnEsiVonEsRinSiEncCheHsAaRndA(CmTillEimReItSerTsI)CS
100
• Weight : Approximated 0.011 gram
TJ=25℃
10
MAXIMUM RATIN8G.3mSs SAingNleD ELECTRICAL CHARACTERISTICS
Rating1s00at 25℃
Half Sine
ambient temperatureWuanvleeJsEsDoECtherwise specified.
1
Single phase half wave, 60Hz, resistive of inductive load.
0.1
For capacitive load, derate current by 20%
50
Marking Code
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum0DC Blocking Voltage
Maximum Av1erage Forward Rectified Cu1rr0ent
SYMBOL FM120-MH FM130-MH FM140-MH 0F.M01150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
12
13
VRRM
20
30
VRMS
14
21
VDC
20
30
IO
100
14
15
40 0.00510
28
35
40 0.00051020
16
18
60
80
42
56
60 40 80
1.0
10
100
70
60100
115 120
150 25℃200
105 100℃140
Volts
Volts
18500
200100 Volts
Amps
NUMBER OF CYCLES AT 60Hz
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rated load (JEDEC method)
TFypIGic.a5l T-ThYerPmICalARLeJsUisNtaCncTeIO(NNotCeA2P) ACITANCE
RΘJA
PERCENTAGE RATED PEAK REVERSE VOLTAGE (%)
30
Amps
40
℃/W
Typical J1u6n00ction Capacitance (Note 1)
CJ
120
PF
Operating Temperature Range
SP1040
TJ
-55 to +125
-55 to +150
℃
Storage Temperature Range
1200
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SP1060 TSTG
SP10100
- 65 to +175
℃
SP10150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SP10200 VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum80A0verage Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
mAmps
10
NOTES:
1- Measure4d00at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0
0
1
10
100
REVERSE VOLTAGE (V)
2012-06
2012-08
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.