BCW68G(1997) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
BCW68G Datasheet PDF : 4 Pages
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CES
Collector-Base Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICES
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCE = 45 V
VCE = 45 V, TA = 150 °C
VEB = 4.0 V
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
120
IC = 100 mA, VCE = 1.0 V
160
IC = 300 mA, VCE = 1.0 V
60
VCE(sat)
Collector-Emitter Saturation Voltage IC = 300 mA, IB = 30 mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 20 mA, VCE = 10 V,
100
f = 100 MHz
Cobo
Ouput Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
Cibo
Input Capacitance
VEB = 0.5 V, IE = 0, f = 1.0 MHz
NF
Noise Figure
IC = 0.2 mA V, VCE = 5.0 V,
RS = 1.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
45
V
60
V
60
V
5.0
V
20
nA
10
µA
20
nA
400
1.5
V
2.0
V
MHz
18
pF
105
pF
10
dB
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400
125 °C
VCE = 5V
300
200
25 °C
100
- 40 °C
0
0.1 0.3
1
3
10 30 100 300
IC - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β = 10
0.4
0.3
25 °C
0.2
0.1
0
1
125 ºC
- 40 ºC
10
100
500
I C - COLLECTOR CURRENT (mA)
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