FQP58N08 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQP58N08 Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 15.0 V
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
100
80
V = 10V
GS
60
V = 20V
GS
40
20
※ Note : TJ = 25℃
0
0
50
100
150
200
250
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
102
101
175℃
25℃
100
10-1
2
-55℃
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
10-1
0.2
175℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 40V
V = 64V
DS
8
6
4
2
※ Note : ID = 57.5A
0
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000
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