HYB3117800BSJ-60(1996) View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

HYB3117800BSJ-60
(Rev.:1996)

2M x 8-Bit Dynamic RAM

Siemens AG 

HYB 3117800BSJ-50/-60/-70

2M x 8-DRAM

The HYB 3117800BSJ is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB

3117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced

circuit techniques to provide wide operating margins, both internally and for the system user.

Multiplexed address inputs permit the HYB 3117800BSJ to be packaged in a standard SOJ 28

400 mil plastic package. These packages provide high system bit densities and are compatible with

commonly used automatic testing and insertion equipment. System-oriented features include single

+ 3.3 V (± 0.3V) power supply, direct interfacing with high-performance logic device families.

Ordering Information

Type

HYB 3117800BSJ-50

HYB 3117800BSJ-60

HYB 3117800BSJ-70

Ordering Code Package

Q67100-Q1147 P-SOJ-28-3 400 mil

Q67100-Q1148 P-SOJ-28-3 400 mil

P-SOJ-28-3 400 mil

Descriptions

3.3V DRAM (access time 50 ns)

3.3V DRAM (access time 60 ns)

3.3V DRAM (access time 70 ns)

Pin Names

A0 to A10

A0 to A9

RAS

OE

I/O1-I/O8

CAS

WE

VCC

VSS

N.C.

Row Address Inputs

Column Address Inputs

Row Address Strobe

Output Enable

Data Input/Output

Column Address Strobe

Read/Write Input

Power Supply (+ 3.3 V)

Ground (0 V)

not connected

Semiconductor Group

2

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