HYB3117800BSJ View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

HYB3117800BSJ

2M × 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode)

Siemens AG 

HYB 5(3)117800/BSJ-50/-60

2M × 8 DRAM

AC Characteristics (cont’d) 5, 6

TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 5 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

Fast Page Mode Read-Modify-Write Cycle

Fast page mode read-write cycle time

CAS precharge to WE

tPRWC

71

–

80 –

ns

tCPWD

48

–

55 –

ns

CAS-before-RAS Refresh Cycle

CAS setup time

CAS hold time

RAS to CAS precharge time

Write to RAS precharge time

Write hold time referenced to RAS

tCSR

10 –

10 –

ns

tCHR

10 –

10 –

ns

tRPC

5

–

5

–

ns

tWRP

10 –

10 –

ns

tWRH

10 –

10 –

ns

CAS-before-RAS Counter Test Cycle

CAS precharge time

tCPT

35 –

40 –

ns

Test Mode

CAS hold time

Write command setup time

Write command hold time

RAS hold time in test mode

tCHRT

30 –

30 –

ns

tWTS

10 –

10 –

ns

tWTH

10 –

10 –

ns

tRAHT

30 –

30 –

ns

Semiconductor Group

8

1998-10-01

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