HYB3117800BSJ-70 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

HYB3117800BSJ-70

2M x 8-Bit Dynamic RAM

Siemens AG 

2M x 8-Bit Dynamic RAM

HYB3117800BSJ-50/-60/-70

Advanced Information

• 2 097 152 words by 8-bit organization

• 0 to 70 °C operating temperature

• Performance:

tRAC

tCAC

tAA

tRC

tPC

RAS access time

CAS access time

Access time from address

Read/Write cycle time

Fast page mode cycle time

-50 -60 -70

50 60 70 ns

13 15 20 ns

25 30 35 ns

90 110 130 ns

35 40 45 ns

• Single + 3.3 V (± 0.3V) supply

• Low power dissipation

max. 432 active mW (-50 version)

max. 396 active mW (-60 version)

max. 360 active mW (-70 version)

7.2 mW standby (LV-TTL)

3.6 mW standby (CMOS)

• Output unlatched at cycle end allows two-dimensional chip selection

• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,

self refresh and test mode

• Fast page mode capability

• All inputs, outputs and clocks fully LVTTL-compatible

• 2048 refresh cycles / 32 ms

• Plastic Package:

P-SOJ-28-3 400 mil

Semiconductor Group

1

1.96

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