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Q67100-Q1092 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
Q67100-Q1092
Siemens
Siemens AG Siemens
Q67100-Q1092 Datasheet PDF : 26 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
2M x 8-Bit Dynamic RAM
HYB5117800BSJ-50/-60/-70
Advanced Information
2 097 152 words by 8-bit organization
0 to 70 °C operating temperature
Performance::
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
Single + 5 V (± 10 %) supply
Low power dissipation
max. 660 active mW (-50 version)
max. 605 active mW (-60 version)
max. 550 active mW (-70 version)
11 mW standby (TTL)
5.5. mW standby (CMOS)
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
Fast page mode capability
All inputs, outputs and clocks fully TTL-compatible
2048 refresh cycles / 32 ms
Plastic Package:
P-SOJ-28-3 400 mil
Semiconductor Group
1
1.96

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