DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

Q67100-Q1092 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
Q67100-Q1092
Siemens
Siemens AG Siemens
Q67100-Q1092 Datasheet PDF : 26 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
HYB 5117800BSJ-50/-60/-70
2M x 8-DRAM
The HYB 5117800BSJ is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB
5117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced
circuit techniques to provide wide operating margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 5117800BSJ to be packaged in a standard SOJ 28
400 mil plastic package. These packages provide high system bit densities and are compatible with
commonly used automatic testing and insertion equipment. System-oriented features include single
+ 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as
Schottky TTL.
Ordering Information
Type
HYB 5117800BSJ-50
HYB 5117800BSJ-60
HYB 5117800BSJ-70
Ordering Code
Q67100-Q1092
Q67100-Q1093
Q67100-Q1094
Package
P-SOJ-28-3
P-SOJ-28-3
P-SOJ-28-3
400 mil
400 mil
400 mil
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
Pin Names
A0 to A10
A0 to A9
RAS
OE
I/O1-I/O8
CAS
WE
VCC
VSS
N.C.
Row Address Inputs
Column Address Inputs
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply (+ 5 V)
Ground (0 V)
not connected
Semiconductor Group
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]