Q67100-Q1092 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
Q67100-Q1092 Datasheet PDF : 26 Pages
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HYB 5117800BSJ-50/-60/-70
2M x 8-DRAM
AC Characteristics 5)6)
16F
TA = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
common parameters
Random read or write cycle time tRC
RAS precharge time
tRP
RAS pulse width
tRAS
CAS pulse width
tCAS
Row address setup time
tASR
Row address hold time
tRAH
Column address setup time
tASC
Column address hold time
tCAH
RAS to CAS delay time
tRCD
RAS to column address delay
tRAD
time
90 –
110 –
130 –
ns
30 –
40 –
50 –
ns
50 10k 60 10k 70 10k ns
13 10k 15 10k 20 10k ns
0
–
0
–
0
–
ns
8
–
10 –
10 –
ns
0
–
0
–
0
–
ns
10 –
15 –
15 –
ns
18 37 20 45 20 50
13 25 15 30 15 35 ns
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period
tRSH
13
15 –
20 –
ns
tCSH
50
60 –
70 –
ns
tCRP
5
–
5
–
5
–
ns
tT
3 50 3 50 3 50 ns 7
tREF
–
32 –
32 –
32 ms
Read Cycle
Access time from RAS
tRAC
Access time from CAS
tCAC
Access time from column address tAA
OE access time
tOEA
Column address to RAS lead time tRAL
Read command setup time
tRCS
Read command hold time
tRCH
Read command hold time
tRRH
referenced to RAS
CAS to output in low-Z
tCLZ
Output buffer turn-off delay
tOFF
– 50 – 60 – 70 ns 8, 9
– 13 – 15 – 20 ns 8, 9
– 25 – 30 – 35 ns 8,10
– 13 – 15 – 20 ns
25 –
30 –
35 –
ns
0
–
0
–
0
–
ns
0
–
0
–
0
–
ns 11
0
–
0
–
0
–
ns 11
0
–
0
–
0
–
ns 8
0 13 0 15 0 20 ns 12
Semiconductor Group
7
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