IRFF120 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
IRFF120 Datasheet PDF : 3 Pages
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IRFF120
Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (RGS = 20kfi) (Note 1)
Continuous Drain Current
Pulsed Drain Current (Note 3)
Gate to Source Voltage
Maximum Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy Rating (Note 4)
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334
VDS
VDGR
ID
IDM
VGS
PD
EAS
Tj TQJG
TL
Tpkg
1RFF120
100
100
6.0
24
±20
20
0.16
36
~55 to 150
300
260
UNITS
V
V
A
A
V
W
W/°C
mJ
°c
°C
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Tj = 25°Cto125°C.
Electrical Specifications Tc = 25°c, Unless otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain ("Miller") Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
BVDSS ID = 250uA, VGS = OV (Figure 10)
100
-
-
V
VGS(TH) VGS = VDS. iD = 250uA
toss VDS = Rated BVDSS,VGS= OV
2.0
-
4.0
V
-
25
HA
VDS = 0.8 x Rated BVDSS, VGS = OV, Tc = 125°C
-
250
uA
'D(ON)
!GSS
rDS(ON)
VDS " b(ON) x rDS(ON)MAX , VGS = 10V
VGS = ±2ov
ID = 3.0A, VGS = 1OV (Figures 8, 9)
6.0
-
-
A
-
- ±100 nA
-
0.25 0.300
n
9fs
VDS > ID(ON) x rDS(ON)MAX ID = 3.0A (Figure 12)
1.5 2.9
-
S
td(ON) VDD = 0.5 x Rated BVDSS, I D = 6.0A, RG = 9.m,
-
tr
VGS =10V (Figures 17, 18), Ft L - 8 D f o r V D S S - 5 0 V ,
-
RL - 6.3Q forVDSS =4ov, WI IOSFET Switching
ld(OFF) Times are Essentially Independent of Operating
-
tf
Temperatures
-
20 40
ns
37
70
ns
50 100
ns
35
70
ns
Q9(TOT) VGS = 10V, ID = 6.0A, VDS = 0.8 x Rated BVDSS
-
10
15
nC
(Figures 14, 19, 20) Gate Charge is Essentially
Independent of Operating Temperature
Qgs
-
6.0
-
nC
Qgd
-
4.0
-
nC
CISS
COSS
CRSS
VDS = 25V, VGS = OV, f = 1 MHz (Figure 1 1 )
-
450
-
PF
-
20
-
PF
-
50
-
PF
LD
Measured from the Drain Modified MOSFET
5.0
nH
Lead, 5.0mm (0.2in) from Symbol Showing the
Header to Center of Die Internal Devices
LS
Measured from the Source Inductances
Lead, 5.0mm (0.2in) from
15
nH
Header to Source Bonding
Pad
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Rfljc
RejA
Free Air Operation
-
- 6.25 °C/W
-
-
175 °C/W
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