IRFS254B View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
IRFS254B Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101 Bottom : 5.0 V
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.8
0.6
VGS = 10V
0.4
VGS = 20V
0.2
※ Note : TJ = 25℃
0.0
0
20
40
60
80
100
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
8000
6000
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
4000
2000
C
iss
C
oss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
25oC
100
10-1
2
-55oC
※ Notes :
1.
2.
V25DS0μ=s40PVulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 50V
10
DS
VDS = 125V
8
VDS = 200V
6
4
2
※ Note : ID = 25 A
0
0
20
40
60
80
100
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. C, November 2001
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