IRF1324S-7PPBF View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IRF1324S-7PPBF

HEXFET® Power MOSFET

Infineon Technologies 

Applications

 High Efficiency Synchronous Rectification in SMPS

 Uninterruptible Power Supply

 High Speed Power Switching

 Hard Switched and High Frequency Circuits

IRF1324S-7PPbF

HEXFET® Power MOSFET

VDSS

RDS(on)

typ.

max.

ID (Silicon Limited)

ID (Package Limited)

24V

0.8m

1.0m

429A

240A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free

G

Gate

D2Pak 7 Pin

D

Drain

S

Source

Base Part Number

IRF1324S-7PPbF

Package Type

D2Pak 7 Pin

Standard Pack

Form

Quantity

Tube

50

Tape and Reel Left

800

Orderable Part Number

IRF1324S-7PPbF

IRF1324STRL-7PP

Absolute Maximum Ratings

Symbol

Parameter

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, VGS @ 10V (Package Limited)

IDM

PD @TC = 25°C

Pulsed Drain Current 

Maximum Power Dissipation

Linear Derating Factor

VGS

dv/dt

Gate-to-Source Voltage

Peak Diode Recovery 

TJ

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Avalanche Characteristics

EAS

Single Pulse Avalanche Energy (Thermally Limited) 

IAR

Avalanche Current 

EAR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

RJC

Junction-to-Case 

RJA

Junction-to-Ambient 

Max.

429

303

240

1640

300

2.0

± 20

1.6

-55 to + 175

300

Units

A

W

W/°C

V

V/ns

°C

230

mJ

See Fig.14,15, 18a, 18b

A

mJ

Typ.

–––

–––

Max.

0.50

40

Units

°C/W

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

1

2015-10-15

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