RF1S9530SM View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
RF1S9530SM Datasheet PDF : 7 Pages
| |||
IRF9530, RF1S9530SM
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 2)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET
Symbol Showing the In-
tegral Reverse
D
P-N Junction Diode
G
MIN
TYP
MAX UNITS
-
-
-12
A
-
-
-48
A
S
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25oC, ISD = -12A, VGS = 0V,
-
(Figure 13)
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs
-
QRR
TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs
-
-
-1.5
V
300
-
ns
1.8
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 5.2mH, RG = 25Ω, peak IAS = 12A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-12.0
-9.6
-7.2
-4.8
-2.4
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + RθJA +TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-11
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