Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
SD803C04S10C(1994) View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
SD803C04S10C
(Rev.:1994)
FAST RECOVERY DIODES Hockey Puk Version
International Rectifier
SD803C04S10C Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
1E4
1E3
1E2
1E1
1E1
1E4
1E3
1E2
1E1
1E1
SD803C..C Series
Bulletin I2069 rev. A 09/94
20 joules per pulse
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
0.4
0.2
0.1
4
2
1
20 joules per pulse
10
0.04
SD803C..S10C Series
Sinusoidal Pulse
T
J
= 12 5°C, V
RRM
= 800V
tp
dv/dt = 10 00V/
µs
SD803C..S10C Series
Trapezoidal Pulse
T
J
= 125
°C, V
RRM
= 800V
tp
dv/dt = 1000V/µs; di/dt=50A/µs
1E2
1E3
1E14E4
1E11E1
1E2
1E3
1E4
Pulse Basewidth (
µs)
Pulse Basewidth (
µs)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
20 jo ules per pulse
10
4
2
1
0.4
0.2
0.1
0.04
20 joules per pulse
10
4
2
1
0.4
0.2
0.1
0.02
0.01
SD803C..S15C Series
Sinusoidal Pulse
tp
T
J
= 125°C, V
RRM
= 800V
dv/dt = 1000V/
µs
SD80 3C..S15C Series
Trapezoidal Pulse
tp
T
J
= 125
°C, V
RRM
= 800V
dv/dt = 1000V/µs; di/dt=50A/µs
1E2
1E3
1E14E
1
4
E11E1
1E2
1E3
1E4
Pulse Basewidth (
µs)
Pulse Basewidth (
µs)
Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics
7
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]